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| NTE58 (NPN) & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Device Dissipation (TFL = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Maximum Collector Cutoff Current Maximum Emitter Cutoff Current DC Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Second Breakdown Collector Current Cutoff Frequency Symbol Test Conditions Min 200 - - 20 - 1 - Typ - - - - - - 20 Max - 0.1 0.1 - 2.5 - - V A MHz Unit V mA mA V(BR)CEO IC = 50mA ICBO IEBO hFE VCE(sat) IS/b fT VCB = 200V, IE = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 8A IC = 10A, IB = 1A VCE = 100V, t = 1sec VCE = 12V, IE = 1A 1.430 (36.32) .961 (24.42) .843 (21.42) B C E .788 (20.02) Min .215 (5.48) .118 (3.0) .244 (6.2) Max Collector connected to Tab |
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